NUCLEATION AND GROWTH OF CHEMICALLY VAPOR-DEPOSITED TUNGSTEN ON VARIOUS SUBSTRATE MATERIALS - A REVIEW

被引：26

作者：

BROADBENT, EK

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 06期

关键词：

D O I：

10.1116/1.583646

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1661 / 1666

页数：6

共 36 条

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[2]

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[3]

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[4]

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[5] GROWTH OF SELECTIVE TUNGSTEN ON SELF-ALIGNED TI AND PTNI SILICIDES BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].

BROADBENT, EK ;

MORGAN, AE ;

DEBLASI, JM ;

VANDERPUTTE, P ;

COULMAN, B ;

BURROW, BJ ;

SADANA, DK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) :1715-1721

[6] SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN [J].

BROADBENT, EK ;

RAMILLER, CL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (06) :1427-1433

[7]

BROADBENT EK, IN PRESS

[8]

BROADBENT EK, 1987, TUNGSTEN OTHER REFRA, V2, P247

[9]

BROADBENT EK, 1983, EXTENDED ABSTRACTS E, V831

[10] SELECTIVE CVD TUNGSTEN VIA PLUGS FOR MULTILEVEL METALLIZATION [J].

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GOROWITZ, B ;

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WOODRUFF, D .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (02) :55-57

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