PERMITTIVITY TEMPERATURE BEHAVIOR OF DONOR-DOPED POSITIVE TEMPERATURE-COEFFICIENT OF RESISTANCE BATIO-3 CERAMICS

被引：11

作者：

ALALLAK, HM

ILLINGSWORTH, J

BRINKMAN, AW

WOODS, J

机构：

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1989年 / 22卷 / 12期

关键词：

D O I：

10.1088/0022-3727/22/12/019

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1920 / 1923

页数：4

共 11 条

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ALALLAK, HM ;

BRINKMAN, AW ;

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WOODS, J .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) :4530-4535

[2] THE EFFECTS OF DONOR DOPANT CONCENTRATION ON THE GRAIN-BOUNDARY LAYER CHARACTERISTICS IN N-DOPED BATIO3 CERAMICS [J].

ALALLAK, HM ;

ILLINGSWORTH, J ;

BRINKMAN, AW ;

RUSSELL, GJ ;

WOODS, J .

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[4] RESISTIVITY ANOMALY IN DOPED BARIUM TITANATE [J].

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JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1964, 47 (10) :484-490

[5] SEMICONDUCTING BARIUM TITANATE [J].

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[6]

IHRIG H, 1977, J APPL PHYS, V63, P308

[7]

ILLINGSWORTH J, 1989, IN PRESS J APPL PHYS

[8] SOME DIELECTRIC AND ELECTRO-OPTIC PROPERTIES OF BATIO3 SINGLE CRYSTALS (TEMPERATURE DEPENDENCE E) [J].

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[9]

JONA F, 1962, FERROELECTRIC CRYSTA, P112

[10] SOME ASPECTS OF SEMICONDUCTING BARIUM TITANATE [J].

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