THE ACCOMMODATION OF MISFIT AT (100) HETEROJUNCTIONS IN III-V-COMPOUND SEMICONDUCTORS BY GLIDING DISSOCIATED DISLOCATIONS

被引：25

作者：

DECOOMAN, BC

CARTER, CB

机构：

来源：

ACTA METALLURGICA | 1989年 / 37卷 / 10期

关键词：

D O I：

10.1016/0001-6160(89)90311-8

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

引用

页码：2765 / 2777

页数：13

共 33 条

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