FREE CARRIER INDUCED CHANGES IN THE ABSORPTION AND REFRACTIVE-INDEX FOR INTERSUBBAND OPTICAL-TRANSITIONS IN ALXGA1-XAS/GAAS/ALXGA1-XAS QUANTUM-WELLS

被引：148

作者：

KUHN, KJ

IYENGAR, GU

YEE, S

机构：

[1] Department of Electrical Engineering, University of Washington, Seattle

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 09期

关键词：

D O I：

10.1063/1.349005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The changes in the real index of refraction and the optical absorption for conduction intersubband transitions in AlxGa1-xAs/GaAs/AlxGa1-xAs quantum wells are examined as a function of the carrier density. Various values for the input optical field and quantum well width are considered in the calculations. The linear contribution due to chi(1) as well as the nonlinear contribution from chi(3) is included. The relationship of the results to device applications such as waveguides and optical modulators is discussed.

引用

页码：5010 / 5017

页数：8

共 23 条

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