ABOVE-BAND-GAP EMISSION IN AMORPHOUS-SEMICONDUCTORS - LOCALIZED STATES VERSUS SURFACE CONTAMINATION

被引：20

作者：

WILSON, BA

机构：

来源：

PHYSICAL REVIEW B | 1981年 / 23卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.23.3102

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3102 / 3105

页数：4

共 22 条

[1] PICOSECOND RELAXATIONS IN AMORPHOUS-SEMICONDUCTORS [J].

ACKLEY, DE ;

TAUC, J ;

PAUL, W .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :957-961

[2] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].

ANDERSON, PW .

PHYSICAL REVIEW LETTERS, 1975, 34 (15) :953-955

[3] APPLICATION OF RAMAN-SPECTROSCOPY TO SURFACE CHEMICAL STUDIES [J].

EGERTON, TA ;

HARDIN, AH .

CATALYSIS REVIEWS-SCIENCE AND ENGINEERING, 1975, 11 (01) :71-116

[4] NEGATIVE-U STATES IN GAP IN HYDROGENATED AMORPHOUS SILICON [J].

FISCH, R ;

LICCIARDELLO, DC .

PHYSICAL REVIEW LETTERS, 1978, 41 (13) :889-891

[5] PICOSECOND DYNAMICS OF OPTICALLY INDUCED ABSORPTION IN THE BAND-GAP OF AS2S3 [J].

FORK, RL ;

SHANK, CV ;

GLASS, AM ;

MIGUS, A ;

BOSCH, MA ;

SHAH, J .

PHYSICAL REVIEW LETTERS, 1979, 43 (05) :394-398

[6]

JOHNSON A, COMMUNICATION

[7]

JOHNSON AM, 1980, CHEM PHYSICS PICOSEC, V14, P285

[8] EVIDENCE FOR NEUTRALITY OF LUMINESCENCE-CENTERS IN CHALCOGENIDE GLASSES [J].

KASTNER, M ;

HUDGENS, SJ .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (06) :665-681

[9]

KASTNER MA, COMMUNICATION, P1303

[10]

LICCIARDELLO DC, COMMUNICATION

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