GAMMA-RADIATION-INDUCED SENSITIZATION, SUPRALINEARITY, AND PHOTOSTIMULATED THERMOLUMINESCENCE IN LIF TLD-100

被引:23
作者
LAKSHMANAN, AR
BHATT, RC
VOHRA, KG
机构
[1] Division of Radiological Protection, Bhabha Atomic Research Centre, Bombay, Trombay
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 53卷 / 02期
关键词
D O I
10.1002/pssa.2210530227
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
With decreasing post‐annealing temperature in the region 300 to 220 °C, the sensitization factor of TL glow peak 5 in LiF TLD‐100 is found to decrease systematically from a value of 8 to 3. This is accompanied by a marked increase of intensity of the residual TL peaks occuring in the region 250 to 320 °C. This is a positive indication of the conversion, on thermal annealing, of trap centres responsible for the residual TL to those responsible for the sensitisation. The mechanism of sensitization is otherwise similar to that proposed by Nink and Kos. The sensitization factor of peak 6 (250 °C) is found nearly 3.5 times higher than that of peak 5 (195 °C). This observation confirms Attix's theory of increased range of hole migration at higher temperatures. The model of Kos and Nink, after taking into account the influence of residual TL at low postannealing temperatures, is found to explain satisfactorily the photostimulated TL in LiF. The increased supralinearity of photo‐TL as compared to the TL due to γ‐rays is attributed to the difference in the relative spatial distribution of trap centres and luminescence centres. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA
引用
收藏
页码:617 / 625
页数:9
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