NEW MICROLITHOGRAPHY TECHNOLOGIES BASED ON RESIST IRRADIATION BY LOW-ENERGY ELECTRONS

被引：6

作者：

KUDRYASHOV, VA

BORZENKO, TB

KRASNOV, VV

ARISTOV, VV

机构：

[1] Institute of Microelectronics Technology RAS. Chernogolovka, Moscow dis.

来源：

MICROELECTRONIC ENGINEERING | 1994年 / 23卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(94)90162-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new low energy electron irradiation based technology to produce selfalignment submicron structures in microlithography is proposed. Its main characteristic features are, first, the transformation of the influence direction from perpendicular to the surface to lateral to it and, second, the penetration depth of the radiation into the resist is much smaller than the resist structure width and height and is equal to the features size to be formed.

引用

页码：307 / 310

页数：4