VOLTAIC CELLS OF (ZNXCUY)OZ THIN-FILMS DEPOSITED BY SPUTTERING RF

被引：2

作者：

FUJINAKA, M

TANAKA, T

SATOH, T

机构：

[1] Tokyo Denki Univ, Tokyo, Jpn, Tokyo Denki Univ, Tokyo, Jpn

来源：

THIN SOLID FILMS | 1987年 / 152卷 / 03期

关键词：

SPUTTERING - Thin Films - ZINC COMPOUNDS - Thin Films;

D O I：

10.1016/0040-6090(87)90259-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth of (Zn//2//8// minus //4//2Cu//3//9// minus //2//5)O//3//3 thin films deposited by r. f. sputtering was studied. Voltaic elements with an ITO/(Zn, Cu)O/Al structure (where ITO is indium tin oxide) were fabricated. The open-circuit voltage and short-circuit current at temperatures of 0-45 degree C were 0. 5-1. 25 V and 0. 3-1. 5 mu A cm** minus **2 respectively. The composition of the films was studied by Auger analysis.

引用

页码：443 / 448

页数：6

共 5 条

[1] OPTICAL-PROPERTIES AND ELECTRONIC INTERACTIONS OF MICROCRYSTALLINE CU-ZNO CATALYSTS
BULKO, JB
HERMAN, RG
KLIER, K
SIMMONS, GW
[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1979, 83 (24) : 3118 - 3122
[2] CUPROUS-OXIDE INDIUM TIN OXIDE THIN-FILM PHOTO-VOLTAIC CELLS
FUJINAKA, M
BEREZIN, AA
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) : 3582 - 3588
[3] FUJINAKA M, 1985, NOV STUD M I EL COMM
[4] Herion J., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P453
[5] TANAKA T, 1986, 47TH C JAP SOC APPL

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