BARRIER-WIDTH DEPENDENT DYNAMICS OF PERPENDICULAR TRANSPORT OF PHOTOEXCITED CARRIERS IN GAAS A1AS SUPERLATTICES

被引：10

作者：

NAKAMURA, A ^{[1
]}

KAWAMOTO, N ^{[1
]}

FUJIWARA, K ^{[1
]}

TSUKADA, N ^{[1
]}

NAKAYAMA, T ^{[1
]}

机构：

[1] MITSUBISHI ELECTR CO,CENT RES LAB,AMAGASAKI,HYOGO 661,JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1989年 / 71卷 / 07期

关键词：

Luminescence - Semiconducting Aluminum Compounds;

D O I：

10.1016/0038-1098(89)90534-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report dynamical aspects of the perpendicular transport in a series of GaAs/AlAs short-period superlattices with an enlarged well in which a barrier width is varied from 0.90 to 1.81 nm. Decay kinetics of luminescence allows us to find that when LB < 1 nm, electron-hole pairs in superlattice layers efficiently sink into an enlarged well indicating the Bloch-type transport. The barrier-width dependence of perpendicular transport is interpreted in terms of variation of miniband widths calculated on the basis of the Kronig-Penney model.

引用

页码：553 / 557

页数：5

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