INVESTIGATION OF THE EARLY STAGES OF THIN-FILM GROWTH OF NI ON THERMALLY GROWN SIO2 BY MEANS OF RBS, AES AND TEM

被引：6

作者：

ANKLAM, HJ

MATTHEIS, R

THRUM, F

机构：

来源：

SURFACE AND INTERFACE ANALYSIS | 1989年 / 14卷 / 08期

关键词：

D O I：

10.1002/sia.740140802

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：433 / 437

页数：5

相关论文

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