JUNCTION CHARACTERISTICS OF POLYBENZO[B]THIOPHENE

被引：7

作者：

ISHIZAWA, R ^{[1
]}

AN, H ^{[1
]}

SATO, K ^{[1
]}

YOSOMIYA, R ^{[1
]}

机构：

[1] CHIBA INST TECHNOL,DEPT IND CHEM,NARASHINO,CHIBA 275,JAPAN

来源：

SYNTHETIC METALS | 1990年 / 38卷 / 01期

关键词：

D O I：

10.1016/0379-6779(90)90067-U

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The junction characteristics of BF4--doped polybenzo[b]thiophene with indium have been studied using sandwich-type elements. The BF4--doped polybenzo[b]thiophene gave rectifying contacts for indium and ohmic contacts for gold. The analyses of the current-voltage and the capacitance-voltage characteristics have revealed that a Schottky barrier is formed at the interface between the polybenzo[b]thiophene and indium. However, the ideality factor of the barrier is large and the junction is imperfect. © 1990.

引用

页码：63 / 68

页数：6

共 9 条

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