PATTERNING OF EPITAXIAL YBA2CU3OX INSULATOR MULTILAYERS WITH A HIGH-TEMPERATURE-RESISTANT LIFT-OFF MASK

A new process for patterning of YBa2Cu3Ox-insulator multilayers is described, using a high-temperature-resistant CaO process mask, which can be evaporated directly onto previously patterned YBa2Cu3Ox layers and removed after film deposition. A crossover contact of two 3-mu-m wide and 30-mu-m long YBa2Cu3Ox striplines has been fabricated by laser deposition, using this patterning technique. The upper and the lower stripline of the crossover contact show T(c) values of almost-equal-to 89 K and a critical current density j(c) (77 K) of 2 and 4 X 10(6) A/cm2, respectively. The contact between the upper and the lower stripline is superconducting below 87 K. At 100 K, the normal conducting contact resistivity is 5 X 10(-8) OMEGA-cm2 based on a contact area of 3 X 3-mu-m.