BOUND EXCITONS AT DOUBLY IONIZABLE ACCEPTORS IN GASB

被引：32

作者：

NOACK, RA ^{[1
]}

RUHLE, W ^{[1
]}

MORGAN, TN ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1978年 / 18卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.18.6944

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6944 / 6956

页数：13

共 23 条

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PIKUS, GE
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