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ANOMALOUS KINK-RELATED EXCESS NOISE IN MOSFETS AT 4.2-K

被引：20
作者：
DIERICKX, B
SIMOEN, E
COS, S
VERMEIREN, J
CLAEYS, C
DECLERCK, GJ
机构：
[1] IMEC V.Z.W., Kapeldreef 75, B-3001, Leuven
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 04期
关键词：
D O I：
10.1109/16.75222
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The anomalous drain-voltage-dependent excess noise, that is observed in silicon MOSFET's at cryogenic temperatures, is examined. A model for the underlying physics is described. It is shown that the mechanisms inducing this excess noise are shallow level impact ionization and trapping in the bulk of the MOSFET. A model for the noise spectrum and amplitude is proposed, and validated by the measurements.
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页码：907 / 912
页数：6
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