ROOM-TEMPERATURE OXIDATION OF SILICON INDUCED BY UV IRRADIATION OF CU3SI

被引：14

作者：

LI, J ^{[1
]}

MAYER, JW ^{[1
]}

MATIENZO, LJ ^{[1
]}

EMMI, F ^{[1
]}

机构：

[1] IBM CORP,DEPT SURFACE SCI,ENDICOTT,NY 13760

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1992年 / 32卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0254-0584(92)90186-C

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thick silicon dioxide films were prepared by room temperature oxidation of Si(100) induced by Cu3Si. This Cu3Si-enhanced oxidation process is accelerated by ultraviolet (UV) light irradiation. Rutherford backscattering (RBS), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) were employed to characterize the chemical and structural properties of the silicon dioxide layer underneath the oxidized Cu3Si surface layer. The resulting films of silicon dioxide are denser and stoichiometric when silicon oxidation proceeds under UV irradiation at room temperature.

引用

页码：390 / 393

页数：4

共 13 条

[1] FORMATION, OXIDATION, ELECTRONIC, AND ELECTRICAL-PROPERTIES OF COPPER SILICIDES [J].