THE OBSERVATION OF HIGH-CONCENTRATIONS OF ARSENIC ANTI-SITE DEFECTS IN ELECTRON-IRRADIATED NORMAL-TYPE GAAS BY X-BAND ELECTRON-PARAMAGNETIC-RES

被引：100

作者：

GOSWAMI, NK

NEWMAN, RC

WHITEHOUSE, JE

机构：

来源：

关键词：

D O I：

10.1016/0038-1098(81)90864-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：473 / 477

页数：5

共 14 条

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[9] AN ANNEALING STUDY OF ELECTRON IRRADIATION-INDUCED DEFECTS IN GAAS
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[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4150 - 4157
[10] VANVECHTEN JA, 1980, HDB SEMICONDUCTORS, V3, P1