A NOVEL TECHNOLOGY FOR A-SI TFT-LCDS WITH BURIED ITO ELECTRODE STRUCTURE

被引：20

作者：

KAWACHI, G

KIMURA, E

WAKUI, Y

KONISHI, N

YAMAMOTO, H

MATSUKAWA, Y

SASANO, A

机构：

[1] HITACHI LTD,MOBARA WORKS,CHIBA 279,JAPAN

[2] HITACHI DEVICE ENGN CO,MUSASHINO OFF,TOKYO,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 07期

关键词：

D O I：

10.1109/16.293338

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel process technology for a-Si TFT-LCD's with the buried ITO electrode (BI) structure was developed and applied to 10-in-diagonal LCD panels. By employing the BI structure, an aperture ratio of 29% was achieved in high resolution panels with a pixel size of 192 mu and the pixel defect density was reduced to about one third of the conventional structure. The defect reduction effect of the BI structure was also confirmed theoretically. The BI structure provides significant advantages for high-performance TFT-LCD's.

引用

页码：1120 / 1124

页数：5