ION-IMPLANTATION FROM THE PAST AND INTO THE FUTURE

被引:26
作者
MOFFATT, S
机构
[1] Applied Materials, Implant Division, Horsham, RH13 5PY, Foundry Lane
关键词
D O I
10.1016/0168-583X(94)00443-9
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
This paper is a view of the past, present and future of ion implantation equipment. From the discovery of charged particles in the last century, a set of apparatus has evolved for processing silicon by implanting several dopant species. The equipment is now standardized into two forms (serial medium, batch high) and produced by several major manufacturers. The technical requirements for device shrinkage in the next several generations of silicon products will focus technical ion beam efforts on lower energy implants with more stable high current beams. The fundamental change however lies in the market for silicon which is becoming totally dominated by consumer products (such as PCs); the relentless drive for lower cost memory and soon in microprocessors will force implanters to increase ''ions into silicon''.
引用
收藏
页码:1 / 6
页数:6
相关论文
共 18 条
[1]  
ARMOUR D, COMMUNICATION
[2]   On the Theory of the Decrease of Velocity of Moving Electrified Particles on passing through Matter [J].
Bohr, N. .
PHILOSOPHICAL MAGAZINE, 1913, 25 (145) :10-31
[3]  
CHEVAT J, 1967, NUCL INSTRUM METHODS, V47, P77
[4]   A new method of positive ray analysis. [J].
Dempster, AJ .
PHYSICAL REVIEW, 1918, 11 (04) :316-325
[5]  
Freeman J.H., 1986, RADIAT EFF, V100, P161
[6]  
GOLDSTEIN E, 1886, BERL BER, V39, P691
[7]  
Groueff Stephane, 1967, MANHATTAN PROJECT
[8]  
Groves Leslie R., 1962, NOW IT CAN BE TOLD
[9]  
Heilbron J. L., 1989, LAWRENCE HIS LAB
[10]  
MAHENDROO V, COMMUNICATION