DOSIMETRY AND TOTAL DOSE RADIATION TESTING OF GAAS DEVICES

被引：13

作者：

MEULENBERG, A

DOZIER, CM

ANDERSON, WT

MITTLEMAN, SD

ZUGICH, MH

CAEFER, CE

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

[2] USAF,ROME AIR DEV CTR,BEDFORD,MA 01731

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/TNS.1987.4337548

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1745 / 1750

页数：6

共 7 条

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[3] STUDY OF DEEP-LEVEL DEFECTS AND ANNEALING EFFECTS IN UNDOPED AND SN-DOPED GAAS SOLAR-CELLS IRRADIATED BY ONE-MEV ELECTRONS [J].

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RAHILLY, WP .

SOLID-STATE ELECTRONICS, 1983, 26 (09) :835-840

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[5] IRRADIATION-INDUCED DEFECTS IN GAAS [J].

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JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (20) :3839-3871

[6] ENERGY-DEPENDENCE OF DEEP LEVEL INTRODUCTION IN ELECTRON-IRRADIATED GAAS [J].

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MOONEY, PM ;

BOURGOIN, JC .

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[7]

YAMAGUCHI M, J APPLIED PHYSICS, V54, P5021

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