ELECTRICAL AND OPTICAL-PROPERTIES OF THIN P-TYPE FILMS PREPARED BY VACUUM EVAPORATION FROM THE CHALCOPYRITE CUINSE2

被引：39

作者：

FRAY, AF

LLOYD, P

机构：

[1] Royal Signals and Radar Establishment, Malvern

来源：

THIN SOLID FILMS | 1979年 / 58卷 / 01期

关键词：

D O I：

10.1016/0040-6090(79)90202-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical and optical properties of thin films prepared by vacuum evaporation from the chalcopyrite CuInSe2 are discussed in relation to their structure and deposition parameters. It is shown that p-type films may contain CuSe or Cu2 - xSe as a second phase and that the presence of Cu2 - xSe is particularly difficult to identify by X-ray diffraction. © 1979.

引用

页码：29 / 34

页数：6

共 10 条

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KUHN, G
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[4] KAZMERSKI LL, 1977, I PHYS C SER, V35, P217
[5] KOKTA M, 1976, J ELECTRON MATER, V5, P69, DOI 10.1007/BF02652887
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (05) : 879 - 880
[7] CRYSTAL DATA FOR CUINSE2
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TOMLINSO.RD
HAMPSHIR.MJ
[J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1973, 6 (OCT1) : 414 - 416
[8] EFFICIENT CULNSE2/CDS SOLAR CELLS
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KASPER, HM
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (02) : 89 - 90
[9] ROOM-TEMPERATURE ELECTRICAL PROPERTIES OF 10 I-III-VI2 SEMICONDUCTORS
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[10] VOROBEV VG, 1967, INORG MATER, V3, P140

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