BLUE-EMITTING DIODES OF 6H-SIC PREPARED BY CHEMICAL VAPOR-DEPOSITION

被引：38

作者：

NISHINO, S

IBARAKI, A

MATSUNAMI, H

TANAKA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 07期

关键词：

D O I：

10.1143/JJAP.19.L353

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L353 / L356

页数：4

共 15 条

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[2]

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[3]

HAZUKI Y, 1978, M JAPAN SOC APPLIED, P480

[4] FABRICATION OF 6H-SIC LIGHT-EMITTING-DIODES BY A ROTATION DIPPING TECHNIQUE - ELECTROLUMINESCENCE MECHANISMS [J].

IKEDA, M ;

HAYAKAWA, T ;

YAMAGIWA, S ;

MATSUNAMI, H ;

TANAKA, T .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) :8215-8225

[5] SITE-DEPENDENT DONOR AND ACCEPTOR LEVELS IN 6 H-SIC [J].

IKEDA, M ;

MATSUNAMI, H ;

TANAKA, T .

JOURNAL OF LUMINESCENCE, 1979, 20 (02) :111-129

[6]

IKEDA M, 1980, THESIS KYOTO U

[7]

IKEDA M, COMMUNICATION

[8]

KALININA EV, 1978, SOV PHYS SEMICOND+, V12, P1372

[9]

KODURAU NV, 1977, SOV PHYS SEMICOND, V11, P527

[10]

MUNCH WV, 1978, SOLID STATE ELECTRON, V21, P1129, DOI 10.1016/0038-1101(78)90348-9

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