DECHANNELING BY DISLOCATIONS AND STACKING-FAULTS IN ION-IMPLANTED SI

被引：12

作者：

GOTZ, G

GRUSKA, B

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1982年 / 194卷 / 1-3期

关键词：

D O I：

10.1016/0029-554X(82)90515-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：199 / 204

页数：6

共 17 条

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BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E ;

PICRAUX, ST .

PHYSICS LETTERS A, 1978, 68 (02) :244-246

[2] MONTE CARLO CHANNELING CALCULATIONS [J].

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[3] DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING [J].

BOGH, E .

CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :653-&

[4] CHANNELING ANALYSIS OF STACKING DEFECTS IN EPITAXIAL SI LAYERS [J].

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E ;

PICRAUX, ST .

NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3) :371-376

[5]

EISEN FH, 1973, CHANNELING, pCH14

[6] DEPTH PROFILING OF EXTENDED DEFECTS IN SILICON BY RUTHERFORD BACKSCATTERING MEASUREMENTS [J].

GRUSKA, B ;

GOTZ, G .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 67 (01) :129-139

[7]

GRUSKA B, UNPUB RAD EFF

[8] DECHANNELLING OF FAST IONS IN DISTORTED CRYSTALS .1. DISLOCATIONS [J].

KUDO, H .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1976, 40 (06) :1645-1653

[9]

LINDHARD J, 1965, MAT FYS MEDD DAN VID, V36, P7

[10]

MAYER JW, 1971, ION IMPLANTATION SEM, pCH3

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