ABSORPTION FROM NEUTRAL ACCEPTORS IN GAAS AND GAP

被引：5

作者：

CHRISTENSEN, O ^{[1
]}

机构：

[1] TECH UNIV DENMARK, PHYS LAB, LYNGBY, DENMARK

来源：

PHYSICAL REVIEW B | 1973年 / 7卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.7.1426

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1426 / 1432

页数：7

共 20 条

[1] OPTICAL ABSORPTION DUE TO FREE HOLES IN GERMANIUM - A COMPARISON OF THEORY AND EXPERIMENT [J].

ARTHUR, JB ;

BAYNHAM, AC ;

FAWCETT, W ;

PAIGE, EGS .

PHYSICAL REVIEW, 1966, 152 (02) :740-&

[2] INTER-VALENCE-BAND TRANSITIONS IN UNIAXIALLY STRESSED GE AND GAAS [J].

BALSLEV, I .

PHYSICAL REVIEW, 1969, 177 (03) :1173-&

[3]

BALSLEV I, UNPUBLISHED

[4]

BAYNHAM AC, 1964, 7 P INT C PHYS SEM, P149

[5] INTERVALENCE BAND TRANSITIONS IN GALLIUM ARSENIDE [J].

BRAUNSTEIN, R .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :280-282

[6] VARIATION OF ELECTRICAL PROPERTIES WITH ZN CONCENTRATION IN GAP [J].

CASEY, HC ;

ERMANIS, F ;

WOLFSTIRN, KB .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) :2945-+

[7] CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS [J].

DRESSELHAUS, G ;

KIP, AF ;

KITTEL, C .

PHYSICAL REVIEW, 1955, 98 (02) :368-384

[8] OPTICAL ABSORPTION AND RECOMBINATION RADIATION IN SEMICONDUCTORS DUE TO TRANSITIONS BETWEEN HYDROGEN-LIKE ACCEPTOR IMPURITY LEVELS AND THE CONDUCTION BAND [J].

EAGLES, DM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (1-2) :76-83

[9]

FAWCETT W, 1965, P PHYS SOC LOND, V85, P831

[10] ACTIVATION ENERGY OF HOLES IN ZN-DOPED GAAS [J].

HILL, DE .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) :1815-&

← 1 2 →