ELECTRICALLY ACTIVE INTERFACES IN ZNO VARISTORS

被引：66

作者：

GREUTER, F

机构：

[1] ABB Corporate Research

来源：

SOLID STATE IONICS | 1995年 / 75卷

关键词：

VARISTORS; ZINC OXIDE; INTERFACE; OXYGEN; BISMUTH OXIDE; INTERFACE STATES; DEFECTS; BREAKDOWN; HOT ELECTRONS; AGING;

D O I：

10.1016/0167-2738(94)00181-Q

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The chemical and electronic interface phenomena in doped ZnO ceramics are described. Monoatomic layers of excess bismuth and oxygen at the grain boundaries are responsible for the electrical activity of the interfaces. Characteristic bulk and interface defect levels govern the electrical behaviour. Together with the hot-electron effects observed at breakdown, they determine the highly non-linear conductivity in these materials used for overvoltage protection.

引用

页码：67 / 78

页数：12

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