FEMTOSECOND ABSORPTION SATURATION STUDIES OF HOT CARRIERS IN GAAS AND ALGAAS

被引：150

作者：

LIN, WZ

SCHOENLEIN, RW

FUJIMOTO, JG

IPPEN, EP

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

[2] MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1988年 / 24卷 / 02期

关键词：

Manuscript received August 5; 1987; revised September 10; 1987. This work was supported in pan by the U.S. Air Force Office of Scientific Research under Grant 85-02 13 and by the National Science Foundation Presidential Young Investigator Program under Grant ECS-8552701. The work of J. G. Fujimoto was supported by the Spectra Physics Corporation. the Newport Corporation; and the Coming Corporation;

D O I：

10.1109/3.123

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：267 / 275

页数：9

共 34 条

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