TEMPERATURE-DEPENDENCE OF AXIAL DECHANNELING BY POINT-DEFECTS

Calculations of the depth dependence of the Rutherford backscattering minimum yield were performed for crystals with uncorrelated displaced lattice atoms (point defects). The main result is that the slope of the temperature dependence changes considerably for different displacement distances ra. In order to explain this effect the contributions of the different dechanneling processes to the minimum yield are discussed in detail. It is shown that the combined action of these processes is quite different for different values of ra, which is responsible for the strong influence of the value of ra on the temperature dependence of the m yield. This effect can be used for the analysis of point defects with preferred positions in the lattice cell. For example, defects in N-implanted GaAs are analysed. © 1990.