INTENSITY DEPENDENCE OF THE 3RD-HARMONIC-GENERATION EFFICIENCY FOR HIGH-POWER FAR-INFRARED RADIATION IN N-SILICON

被引：19

作者：

URBAN, M ^{[1
]}

NIESWAND, C ^{[1
]}

SIEGRIST, MR ^{[1
]}

KEILMANN, F ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-70569 STUTTGART,GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 03期

关键词：

D O I：

10.1063/1.358944

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The third-harmonic generation of far-infrared (FIR) laser radiation in n-doped silicon was measured with full temporal resolution of the power fluctuations during the FIR laser pulse. Thus, the intensity dependence of the nonlinear coefficient χ(3) could be observed. For 2 MW incident power, corresponding to an intensity of 15 MW/cm2, at a wavelength of 676 μm a power conversion efficiency of 10-3 was reached. © 1995 American Institute of Physics.

引用

页码：981 / 984

页数：4

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