SPIN RELAXATION OF EXCITONS IN STRAINED INGAAS/GAAS QUANTUM-WELLS

被引：5

作者：

DAREYS, B ^{[1
]}

AMAND, T ^{[1
]}

MARIE, X ^{[1
]}

BAYLAC, B ^{[1
]}

BARRAU, J ^{[1
]}

BROUSSEAU, M ^{[1
]}

RAZDOBREEV, I ^{[1
]}

DUNSTAN, DJ ^{[1
]}

机构：

[1] UNIV SURREY,DEPT PHYS,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

JOURNAL DE PHYSIQUE IV | 1993年 / 3卷 / C5期

关键词：

D O I：

10.1051/jp4:1993573

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have investigated the exciton spin dynamics in strained InxGa1-x As/GaAs (x less-than-or-equal-to 0.2) quantum wells. The variation of the initial polarization with the excitation energy is well correlated with the increasing mixing of the valence band states. The time behavior of the depolarization curves clearly demonstrates the prime importance of the hole and exciton spin relaxation processes.

引用

页码：351 / 354

页数：4

共 8 条

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