DEEP CENTERS INTRODUCED BY ARGON ION-BOMBARDMENT IN N-TYPE SILICON

被引：14

作者：

GARRIDO, J

CALLEJA, E

PIQUERAS, J

机构：

来源：

SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 12期

关键词：

D O I：

10.1016/0038-1101(81)90180-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1121 / 1126

页数：6

共 23 条

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