A MICROSCOPIC VIEW OF RADIATION DAMAGE IN SEMICONDUCTORS USING EPR AS A PROBE

被引：91

作者：

WATKINS, GD

机构：

[1] General Electric Research and Development Center Schenectady, New York

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1969年 / NS16卷 / 06期

关键词：

D O I：

10.1109/TNS.1969.4325498

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This is the text of a tutorial talk on the use of electron paramagnetic resonance (EPR) as a “microscopic” tool in the study of radiation-produced defects in semiconductors. The basic concepts of EPR and its general applicability to point defects in semiconductors are outlined. As an illustrative example, the study of a p-type (aluminum doped) silicon sample is described from 20. 4°K irradiation with 1.5 MeV electrons through various annealing stages. By analysis of the EPR spectra, it is shown that the major defects can be identified and the annealing mechanisms determined. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：13 / &