THE P-TO-N CONVERSION OF HGCDTE, HGZNTE AND HGMNTE BY ANODIC-OXIDATION AND SUBSEQUENT HEAT-TREATMENT

被引：20

作者：

BROGOWSKI, P

PIOTROWSKI, J

机构：

[1] Inst. of Tech. Phys., Mil. Acad. of Technol., Warsaw

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 06期

关键词：

D O I：

10.1088/0268-1242/5/6/011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

p-n junctions have been formed by anodic oxidation of HgCdTe, HgZnTe and HgMnTe followed by a low-temperature anneal. The dependence of junction depth on anneal time, temperature, concentration of native acceptors and material composition has been investigated. The results are interpreted as a diffusion of mercury into the underlying bulk from a finite source formed during anodisation at the interface between the oxide and the bulk of mercury-based semiconductor alloys. The converted layers exhibit high recommendation times and the method can be used for fabrication of photoconductors and photodiodes.

引用

页码：530 / 532

页数：3

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