COMPLEXITY OF THE MAGNETIC-FIELD-INDUCED CROSS-OVER INSTABILITY OF A FILAMENTARY CURRENT IN N-GAAS

被引:3
作者
AOKI, K
KONDO, T
机构
[1] Department of Electrical Engineering, Faculty of Engineering, Kobe University, Kobe, 657, Rokkodai, Nada
关键词
D O I
10.1016/0375-9601(91)90821-O
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The complex behavior of the magnetic-field-induced cross-over instability of a filamentary current formed by an impact ionization process has been investigated in high-purity n-GaAs at 4.2 K. By applying a longitudinal magnetic field B, the holding voltage of the current filament shifts toward a higher voltage and crosses over the breakdown voltage with B greater-than-or-similar-to B(c) (B(c) ranged from 25 to 47 mT). Three types of cross-over instability are classified and discussed by using the doubly S-shaped current-voltage characteristics deduced from a physical model. The various nature of the cross-over instability is attributed to geometric effects of the current filament. A mathematical model is presented to demonstrate the generalized cross-over instability.
引用
收藏
页码:281 / 286
页数:6
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