DEEP LEVEL DEFECTS IN AU-ZNSE SCHOTTKY DIODES

被引：9

作者：

BESOMI, P ^{[1
]}

WESSELS, BW ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60201

来源：

ELECTRONICS LETTERS | 1980年 / 16卷 / 21期

关键词：

D O I：

10.1049/el:19800565

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：794 / 795

页数：2

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