ELECTROLUMINESCENCE IN OXYGEN CO-DOPED ZNS-TMF3 AND ZNS-TM, LI THIN-FILM DEVICES

被引：17

作者：

SOHN, SH ^{[1
]}

HAMAKAWA, Y ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 18期

关键词：

D O I：

10.1063/1.109429

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of oxygen co-doping in ZnS:TmF3 and ZnS:Tm, Li thin-film electroluminescent devices are reported. Active layers are deposited in oxygen atmosphere at substrate temperatures of 200 and 300-degrees-C. It is found that by oxygen codoping the luminance of ZnS:TmF3 and ZnS:Tm, Li devices increases, and that this phenomenon becomes marked in the films prepared at a higher substrate temperature.

引用

页码：2242 / 2244

页数：3

共 5 条

[1]

MORTON DC, 1989, 9TH P INT DISPL RES, P74

[2] ELECTROLUMINESCENCE IN LI-CODOPED ZNS - TMF3 THIN-FILM DEVICES [J].