DOUBLE AND TRIPLE CHARGE PUMP FOR POWER IC - IDEAL DYNAMIC-MODELS TO AN OPTIMIZED DESIGN

被引：12

作者：

DICATALDO, G

PALUMBO, G

机构：

[1] Univ Di Catania, Catania

来源：

IEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMS | 1993年 / 140卷 / 01期

关键词：

CHARGE PUMP; OPTIMIZED DESIGN;

D O I：

10.1049/ip-g-2.1993.0005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors propose an optimised design' methodology for the double and triple optimised charge pump. The circuits discussed give an output voltage greater than the supply voltage and are commonly used in power IC or memory to allow the switching on of a MOS device. The theoretical models of charge pumps in the transient region are reported to obtain better knowledge of the circuits and the optimised design.

引用

页码：33 / 38

页数：6

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