PROPERTIES OF AL2O3 OPTICAL COATINGS ON GAAS PRODUCED BY OXIDATION OF EPITAXIAL ALAS/GAAS FILMS

被引：25

作者：

SCHUBERT, EF

PASSLACK, M

HONG, M

MANNERTS, J

OPILA, RL

PFEIFFER, LN

WEST, KW

BETHEA, CG

ZYDZIK, GJ

机构：

[1] ATandT Bell Laboratories, Murray Hill, NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 22期

关键词：

D O I：

10.1063/1.111376

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Auger analysis of oxidized AlAs epitaxial layers grown by molecular-beam epitaxy reveals that the composition of the films is stoichiometric Al2O3. High optical quality of the films is demonstrated by optical reflection and transmission measurements. A reflectivity of 6% is measured for an antireflection coating on GaAs. Leakage currents in the nA range and resistivities >5X10(11) OMEGA cm are deduced from current-voltage measurements. Capacitance-voltage measurements on metal-oxide-semiconductor structures using the Al2O3 films obtained by oxidizing AlAs, reveal a significant reduction of the interface state density as compared to conventional, electron beam evaporated Al2O3.

引用

页码：2976 / 2978

页数：3

共 9 条

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