A NEW METHOD WITH INCREASES THE SI CONTENT IN WET SILYLATION, AND ITS RELATION TO THE THERMAL EFFECTS DURING O(2) PLASMA DEVELOPMENT

被引：4

作者：

GOGOLIDES, E

TZEVELEKIS, D

YAMMAKOPOULOU, K

HATZAKIS, M

机构：

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 27卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(94)00128-H

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new process sequence which increases Si incorporation in the usual silylation process is presented. The commercial photoresist AZ 5214(TM) is exposed with 405, 365, or 248 nm (H-Line, I-line or DUV respectively) light, and postbaked. An additional step of a broad-band flood-exposure immediately before silylation affects the Si content taken up by the resist, and hence its plasma resistance. The new process is compared with the classic wet silylation process, as well as with etching at elevated temperatures.

引用

页码：381 / 384

页数：4

共 12 条

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