HIGH-EFFICIENCY TRANSFERRED ELECTRON OSCILLATORS

被引：9

作者：

REYNOLDS, JF

BERSON, BE

ENSTROM, RE

机构：

[1] RCA Laboratories David Sarnoff Res. Ctr., Princeton

来源：

PROCEEDINGS OF THE IEEE | 1969年 / 57卷 / 09期

关键词：

D O I：

10.1109/PROC.1969.7380

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Results of material research and circuit development for high-efficiency GaAs transferred electron oscillators are described. Single-chip devices have been operated with efficiencies as high as 32.2 percent at L-band frequencies. Devices made paralleling chips have yielded powers as high as 220 watts with 23.2 percent efficiency. © 1969 IEEE. All rights reserved.

引用

页码：1692 / &