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INTERFACE FORMATION OF SEMICONDUCTORS WITH HIGH-TC SUPERCONDUCTORS - GE/LA1.85SR0.15CUO4

被引：24
作者：
GAO, Y [1 ]
WAGENER, TJ [1 ]
WEAVER, JH [1 ]
CAPONE, DW [1 ]
机构：
[1] ARGONNE NATL LAB,DIV MAT SCI,ARGONNE,IL 60439
来源：
PHYSICAL REVIEW B | 1988年 / 37卷 / 01期
关键词：
D O I：
10.1103/PhysRevB.37.515
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：515 / 518
页数：4
相关论文
共 26 条
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