PHOTOELECTRONIC PROPERTIES OF ZINC IMPURITY IN SILICON

[1] ALEKSEEVA VG, 1970, SOV PHYS SEMICOND+, V3, P1179

[2] BAKHADYRKHANOV MK, 1970, SOV PHYS SEMICOND+, V4, P739

[3] PHOTOCONDUCTIVITY ASSOCIATED WITH INDIUM ACCEPTORS IN SILICON [J]. PHYSICAL REVIEW, 1968, 173 (03): : 767 - +

[4] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P280

[5] DETERMINATION OF CAPTURE CROSS SECTIONS BY OPTICAL QUENCHING OF PHOTOCONDUCTIVITY [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) : 2712 - &

[6] LASER SATURATION OF PHOTOCONDUCTIVITY AND DETERMINATION OF IMPERFECTION PARAMETERS IN SENSITIVE PHOTOCONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) : 4132 - &

[7] BUBE RH, 1959, RCA REV, V20, P564

[8] BUBE RH, 1966, 2 6 COMPOUNDS, pCH13

[9] BUBE RH, 1960, PHOTOCONDUCTIVITY SO, P171

[10] DOUBLE-ACCEPTOR BEHAVIOR OF ZINC IN SILICON [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1390 - 1393

[1] ALEKSEEVA VG, 1970, SOV PHYS SEMICOND+, V3, P1179

[2] BAKHADYRKHANOV MK, 1970, SOV PHYS SEMICOND+, V4, P739

[3] PHOTOCONDUCTIVITY ASSOCIATED WITH INDIUM ACCEPTORS IN SILICON [J]. PHYSICAL REVIEW, 1968, 173 (03): : 767 - +

[4] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P280

[5] DETERMINATION OF CAPTURE CROSS SECTIONS BY OPTICAL QUENCHING OF PHOTOCONDUCTIVITY [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) : 2712 - &

[6] LASER SATURATION OF PHOTOCONDUCTIVITY AND DETERMINATION OF IMPERFECTION PARAMETERS IN SENSITIVE PHOTOCONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) : 4132 - &

[7] BUBE RH, 1959, RCA REV, V20, P564

[8] BUBE RH, 1966, 2 6 COMPOUNDS, pCH13

[9] BUBE RH, 1960, PHOTOCONDUCTIVITY SO, P171

[10] DOUBLE-ACCEPTOR BEHAVIOR OF ZINC IN SILICON [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1390 - 1393