BEAMWIDTH FOR ASYMMETRIC AND MULTILAYER SEMICONDUCTOR-LASER STRUCTURES

被引：10

作者：

BUUS, J

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1981年 / 17卷 / 05期

关键词：

D O I：

10.1109/JQE.1981.1071157

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：732 / 736

页数：5

共 19 条

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CASEY, HC ;

PANISH, MB ;

MERZ, JL .

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[5]

Casey Jr H. C., 1978, HETEROSTRUCTURE LASE, P71

[6] CALCULATION OF FAR-FIELD HALFPOWER WIDTH AND MIRROR REFLECTION COEFFICIENTS OF DOUBLE-HETEROSTRUCTURE LASERS [J].

DEWAARD, PJ .

ELECTRONICS LETTERS, 1975, 11 (01) :11-12

[7]

DUMKE WP, 1975, IEEE J QUANTUM ELECT, VQE11, P400, DOI 10.1109/JQE.1975.1068627

[8] FAR-FIELD EMISSION PATTERNS OF SINGLE HETEROSTRUCTURE GAAS LASERS [J].

HENSHALL, GD ;

WHITEAWAY, JE .

ELECTRONICS LETTERS, 1974, 10 (15) :326-327

[9]

HENSHALL GD, 1979, IEE J SOLID STATE EL, V3, P174

[10] RADIATION FROM A SOLID-STATE LASER [J].

HOCKHAM, GA .

ELECTRONICS LETTERS, 1973, 9 (17) :389-391

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