QUANTITATIVE AUGER ANALYSIS OF ION-IMPLANTED BORON AND ARSENIC IN POLYCRYSTALLINE SILICON

被引：10

作者：

FUJIWARA, K ^{[1
]}

OHTANI, M ^{[1
]}

KANAYAMA, K ^{[1
]}

OGATA, H ^{[1
]}

机构：

[1] MITSUBISHI ELECT CORP,CENT RES LAB,AMAGASAKI,HYOGO,JAPAN

来源：

关键词：

D O I：

10.1016/0039-6028(76)90056-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：435 / 442

页数：8

共 10 条

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[3] CONSIDERATION OF L-SHELL IONIZATION CROSS-SECTIONS IN AUGER-ELECTRON SPECTROSCOPY
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GERLACH, RL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (01): : 188 - 191
[4] Grove A S, 1967, PHYS TECHNOLOGY SEMI
[5] HOFKER WK, 1975, PHILIPS RES REPT S8
[6] FIRST-ORDER APPROXIMATION TO QUANTITATIVE AUGER ANALYSIS IN RANGE 100 TO 1000EV USING CMA ANALYZER
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[J]. SURFACE SCIENCE, 1975, 49 (01) : 318 - 324
[7] QUANTITATIVE AUGER-ELECTRON SPECTROSCOPY USING ELEMENTAL SENSITIVITY FACTORS
PALMBERG, PW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01): : 214 - 218
[8] PALMBERG PW, 1972, HDB AUGER ELECTRON S
[9] DETECTABILITY LIMITS FOR BORON AND PHOSPHORUS IN SILICON BY AUGER-ELECTRON SPECTROSCOPY (AES)
THOMAS, JH
MORABITO, JM
[J]. SURFACE SCIENCE, 1974, 41 (02) : 629 - 633
[10] TSUKAMOTO K, COMMUNICATION