ELECTRIC FIELD PROFILE AND ELECTRON DRIFT VELOCITIES IN LITHIUM DRIFTED SILICON

被引：12

作者：

ZULLIGER, HR

NORRIS, CB

SIGMON, TW

PEHL, RH

机构：

[1] Solid-State Electronics Laboratory, Stanford University, Stanford, CA

[2] Lawrence Radiation Laboratory, University of California, Berkeley, CA

来源：

NUCLEAR INSTRUMENTS & METHODS | 1969年 / 70卷 / 02期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0029-554X(69)90370-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The electric field profile and the drift velocity of electrons in lithium drifted silicon in the 〈111〉 direction at room temperature have been measured. By injecting short bursts of 10 keV electrons into reverse biased diodes, current pulses were produced and viewed on a sampling oscilloscope. To improve the accuracy of the measurement, a picosecond signal averaging system was employed. Electric field profiles in thin Si(Li) showed an over-compensation of the p material near the n+ contact, probably due to the lithium diffusion process. Drift velocity measurements as a function of electric field over the range from 2.0 to 48 kV/cm were obtained. At 48 kV/cm, the drift velocity of 8.6×106cm/sec is not yet a saturation value. © 1969.

引用

页码：125 / +

页数：1

共 10 条

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[2] TECHNIQUE AND APPARATUS FOR DETERMINING RESPONSE OF SCINTILLATORS AND SEMICONDUCTORS TO LOW ENERGY X-RAY EXCITATION
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[7] NORRIS CB, TO BE PUBLISHED
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[J]. NUCLEAR INSTRUMENTS & METHODS, 1967, 51 (02): : 261 - +

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