EPITAXIAL-GROWTH OF NBN ON AN ULTRATHIN MGO SEMICONDUCTOR SYSTEM

被引：47

作者：

TONOUCHI, M

SAKAGUCHI, Y

KOBAYASHI, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 03期

关键词：

D O I：

10.1063/1.339708

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：961 / 966

页数：6

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