ARSENIC DOPING IN METALORGANIC CHEMICAL VAPOR-DEPOSITION HG1-XCDXTE USING TERTIARYBUTYLARSINE AND DIETHYLARSINE

被引：17

作者：

EDWALL, DD

CHEN, JS

BUBULAC, LO

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 03期

关键词：

D O I：

10.1116/1.585401

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

P-type arsenic doped epitaxial layers of HgCdTe have been grown by metalorganic chemical vapor deposition using two alkyl sources, tertiarybutylarsine and diethylarsine. Data are presented on Hall characteristics and arsenic concentration profiles. High activation efficiencies and hole mobilities have been obtained over the range mid-10(15) to low-10(17) cm-3.

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页码：1691 / 1694

页数：4

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