HIGH-FREQUENCY CAPACITANCE VOLTAGE CHARACTERISTICS OF AMORPHOUS (UNDOPED) CRYSTALLINE SILICON HETEROSTRUCTURES

被引:2
作者
IYER, SB
KUMAR, V
HARSHAVARDHAN, KS
机构
[1] INDIAN INST SCI,DEPT PHYS,BANGALORE 560012,KARNATAKA,INDIA
[2] INDIAN INST SCI,CTR MAT RES,BANGALORE 560012,KARNATAKA,INDIA
关键词
D O I
10.1016/0038-1101(91)90122-F
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A numerical procedure is presented for calculating high-frequency capacitance variation with bias in amorphous (undoped)/crystalline silicon heterojunction. The results of the model calculations using this procedure have been reported, for different p silicon substrates. These have been compared with the corresponding capacitance variations in the other limiting case, in which the heterostructure acts like an MIS structure. The effect of interface states on the capacitance characteristics has also been studied. In the second part, we report the results of 1 MHz capacitance measurements on various amorphous (undoped)/crystalline silicon heterostructures.
引用
收藏
页码:535 / 543
页数:9
相关论文
共 25 条
[1]   MEASUREMENT OF CONDUCTIVITY DENSITY OF STATES OF EVAPORATED AMORPHOUS SILICON FILMS [J].
BRODSKY, MH ;
DOHLER, GH ;
STEINHARDT, PJ .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 72 (02) :761-770
[2]  
CARLSON DE, 1979, TOP APPL PHYS, V36, P302
[3]  
DOHLER GH, 1974, AIP C P, V20, P351
[4]  
GHNNAM M, 1984, INT ELECTRON DEVICE, P746
[5]  
IYER SB, 1989, JAP J APPL PHYS LETT, V28
[6]   AMORPHOUS-CRYSTALLINE SILICON JUNCTIONS [J].
JAYADEVAJAH, TS ;
BUSMUNDR.O .
ELECTRONICS LETTERS, 1972, 8 (03) :75-+
[7]   MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY [J].
LANG, DV ;
COHEN, JD ;
HARBISON, JP .
PHYSICAL REVIEW B, 1982, 25 (08) :5285-5320
[9]   METAL-SEMICONDUCTOR JUNCTIONS AND AMORPHOUS-CRYSTALLINE HETEROJUNCTIONS USING B-DOPED HYDROGENATED AMORPHOUS-SILICON [J].
MATSUURA, H ;
MATSUDA, A ;
OKUSHI, H ;
OKUNO, T ;
TANAKA, K .
APPLIED PHYSICS LETTERS, 1984, 45 (04) :433-435
[10]   ELECTRICAL-PROPERTIES OF N-AMORPHOUS P-CRYSTALLINE SILICON HETEROJUNCTIONS [J].
MATSUURA, H ;
OKUNO, T ;
OKUSHI, H ;
TANAKA, K .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) :1012-1019