NEW THEORY OF LINE WIDTHS OF RADIATIVE TRANSITIONS DUE TO DISORDERING IN SEMICONDUCTOR ALLOYS

被引:14
作者
LEE, SM
BAJAJ, KK
机构
[1] Department of Physics, Emory University, Atlanta
关键词
D O I
10.1063/1.106509
中图分类号
O59 [应用物理学];
学科分类号
摘要
A quantum mechanical formalism for the excitonic photoluminescence linewidth in semiconductor alloys due to band gap fluctuations caused by the random distributions of alloy components is presented. Using a quantum mechanical description for the excitonic system, the mean deviation of its transition energy due to the statistical potential fluctuations is calculated using a first-order perturbation theory. We then apply this formalism to calculate the linewidth of the ground state excitonic transition as a function of composition. Specifically, the excitonic linewidth in AlxGa1-xAs alloy as a function of Al concentration is calculated and compared with earlier models and available low-temperature photoluminescence data.
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页码:853 / 855
页数:3
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