CHARACTERIZATION OF THE DEPOSITION AND MATERIALS PARAMETERS OF THIN-FILM TINI FOR MICROACTUATORS AND SMART MATERIALS

被引：24

作者：

JARDINE, AP

MADSEN, JS

MERCADO, PG

机构：

[1] SUNY at Stony Brook, Stony Brook, United States

来源：

MATERIALS CHARACTERIZATION | 1994年 / 32卷 / 03期

关键词：

D O I：

10.1016/1044-5803(94)90086-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Development of smart materials and materials for microelectromechanical systems (MEMS) are complicated by the need to grow dissimilar active or adaptive materials in close proximity. This entails discouraging unwanted chemical and physical interactions that prevent production of the appropriate phases. An important component of these systems will be thin-film shape memory effect TiNi. This article discusses the characterization of the deposition of thin film TiNi for these applications as well as the cycling speed for MEMS.

引用

页码：169 / 178

页数：10

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