EXTREMELY UNIFORM, REPRODUCIBLE GROWTH OF DEVICE QUALITY INGAASP-INP HETEROSTRUCTURES IN THE T-SHAPED REACTOR AT ATMOSPHERIC-PRESSURE

被引：18

作者：

MIRCEA, A

OUGAZZADEN, A

DASTE, P

GAO, Y

KAZMIERSKI, C

BOULEY, JC

CARENCO, A

机构：

[1] CNET, France

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(88)90533-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：235 / 241

页数：7

共 7 条

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[2]

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[3] THE GROWTH AND CHARACTERIZATION OF DEVICE QUALITY INP/GA1-XINXASYP1-Y DOUBLE HETEROSTRUCTURES BY ATMOSPHERIC-PRESSURE MOVPE USING TRIMETHYLINDIUM [J].

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MELLET, R ;

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[4] INSTRUMENTAL ASPECTS OF ATMOSPHERIC-PRESSURE MOVPE GROWTH OF INP AND INP - GAINASP HETEROSTRUCTURES [J].

MIRCEA, A ;

MELLET, R ;

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[5]

MIRCEA A, 1988, I PHYS C SER, V91

[6]

MIRCEA A, 1984, Patent No. 10154

[7]

Thrush E. J., 1987, Chemtronics, V2, P62

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