26-PERCENT EFFICIENT POINT-JUNCTION CONCENTRATOR SOLAR-CELLS WITH A FRONT METAL GRID

被引：39

作者：

CUEVAS, A

SINTON, RA

MIDKIFF, NE

SWANSON, RM

机构：

[1] Department of Electrical Engineering, Stanford University, Stanford

[2] Department of Electrical Engineering, Stanford University, Stanford

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 01期

关键词：

D O I：

10.1109/55.46913

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on silicon concentrator cells with point diffusions and metal contacts on both the front and back sides. The design minimizes reflection losses by forming an inverted pyramid topography on the front surface and by shaping the metal grid lines in the form of a triangular ridge. A short-circuit current density of 39.6 mA/ cm2 has been achieved even though the front grid covers 16 percent of the cell's active area of 1.56 cm2. This, together with an open-circuit voltage of 700 mV, has led to an efficiency of 22 percent at one sun, AM1.5 global spectrum. Under direct-spectrum, 8.8-W/cm2, concentrated light, the efficiency is 26 percent. This is the highest ever reported for a silicon cell having a front metal grid. © 1990 IEEE

引用

页码：6 / 8

页数：3

共 9 条

[1]

BORDEN PG, 1982, 16TH IEEE PVSC NEW Y, P574

[2] 25-PERCENT EFFICIENT LOW-RESISTIVITY SILICON CONCENTRATOR SOLAR-CELLS [J].